Experimental evidence for zero-correlation-energy deep defects in intrinsic hydrogenated amorphous silicon
- 18 June 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (25), 3062-3065
- https://doi.org/10.1103/physrevlett.64.3062
Abstract
Depletion-width-modulated ESR spectroscopy together with junction-capacitance techniques yield the total spin and charge change associated with the emission of electrons from deep defects (D) in intrinsic a-Si:H samples. We find that, in contrast to n-type doped samples, the predominant transition is from the to charge state near midgap. However, the magnitude of spin to charge change is too small for a defect having a significantly positive correlation energy, ; rather, it agrees with a nearly zero value of (-50<<+80 meV) between the singly and doubly occupied charge states.
Keywords
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