Interface recombination in P-type GaAs-(AlGa)As quantum well heterostructures
- 31 October 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 56 (1), 17-20
- https://doi.org/10.1016/0038-1098(85)90525-3
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Photoluminescence decay times in (AlGa)As GaAs multiple quantum well heterostructuresSuperlattices and Microstructures, 1985
- Effects of prelayers on minority-carrier lifetime in GaAs/AlGaAs double heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1984
- Minority-carrier lifetimes and internal quantum efficiency of surface-free GaAsJournal of Applied Physics, 1978