p-n Junction Photodiodes in PbTe Prepared by Sb+ Ion Implantation

Abstract

n‐p junction photovoltaic detectors in PbTe have been fabricated using Sb⁺ ion implantation to create the n‐type layer. At 77 °K, 15‐mil square diodes have had zero‐bias resistances as high as 15 MΩ for a resistance‐area product of 2.1×10⁴ Ωcm². Peak detectivities at 4.4 μm in reduced background as high as 1.6×10¹² cmHz^1/2/W were observed. Diode quantum efficiencies were typically 40% at 4.4 μm.