MINORITY CARRIER LIFETIME IN ION-IMPLANTED AND ANNEALED SILICON
- 1 August 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (3), 107-109
- https://doi.org/10.1063/1.1653325
Abstract
Results are presented of an investigation to determine whether minority carrier lifetime within ion‐implanted layers can be restored to preirradiation levels by annealing. Reverse‐recovery measurements were conducted on diffused diodes damaged on the low‐doped side by light doses of carbon. The results show that practically complete recovery can be obtained, but annealing beyond the 400°C range associated with light‐dose lattice reordering to as high as 600–650°C is required.Keywords
This publication has 7 references indexed in Scilit:
- The implanted profiles of boron, phosphorus and arsenic in silicon from junction depth measurementsSolid-State Electronics, 1970
- Electrical Behavior of Group III and V Implanted Dopants in SiliconJournal of Applied Physics, 1969
- DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1969
- Relation of neutron to ion damage annealing in Si and GeRadiation Effects, 1969
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- Electrical and physical measurements on silicon implanted with channelled and nonchanneled dopant ionsCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967