Two-dimensional metastable magnetic semiconductor structures
- 26 May 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (21), 1482-1484
- https://doi.org/10.1063/1.96896
Abstract
Metastable zinc-blende MnSe has been grown by molecular beam epitaxy. The magnetic semiconductor has been incorporated into three novel superlattice structures which include a binary ZnSe/MnSe superlattice, a comb superlattice, and a ZnSe/(Zn,Mn)Se superlattice structure consisting of ZnSe wells perturbed by the insertion of ultrathin layers (two to three monolayers) of MnSe. Reflection high-energy electron diffraction and transmission electron microscopy reveal the zinc-blende crystal structure of the MnSe layers. Preliminary optical measurements show agreement with anticipated exciton emission energies; such spectra show large magnetic field induced shifts indicating that, although MnSe is antiferromagnetic, these ‘‘two-dimensional’’ magnetic sheets exhibit paramagnetic behavior.Keywords
This publication has 9 references indexed in Scilit:
- Lattice parameters of Zn1−xMnxSe and tetrahedral bond lengths in AII1−xMnxBVI alloysJournal of Applied Physics, 1985
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Wide gap II-VI superlattices of ZnSe-Zn1−xMnxSeApplied Physics Letters, 1985
- Molecular beam epitaxy of Cd1−xMnxTeApplied Physics Letters, 1984
- Electrical, optical, and magnetic properties of Hg1−xMnxTeJournal of Vacuum Science and Technology, 1982
- Electrical properties of p-type MnxCd1−x Te crystalsJournal of Applied Physics, 1982
- Exchange Interaction of Manganese 3d5 States with Band Electrons in Cd1−xMnxTePhysica Status Solidi (b), 1978
- Optical properties and electronic structure of crossroads material MnTeSolid State Communications, 1977
- Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977