Using a double-doping strategy to prepare a bilayer device architecture for high-efficiency red PhOLEDs

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Abstract
A simple, bilayered, red phosphorescent organic light-emitting device featuring a doubly-doped emitting layer comprising of the novel hole-transporting host DTAF, the electron-transporting host 27SFBI, and the emitter Os(bpftz)2(PPhMe2)2 covering the interfacial region provides an unusually high current of ca. 1560 mA cm−2 at 8.5 V, a maximum brightness of 32700 cd m−2, external quantum efficiencies as high as 12.3% (10.9% at 1000 cd m−2), and a power efficiency of 13.5 lm W−1. This concise device architecture is very cost-effective and competitive for practical applications.