Theory of insulated-gate field-effect transistors near and beyond pinch-off
- 1 February 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (2), 129-142
- https://doi.org/10.1016/0038-1101(66)90084-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Physical processes in insulated-gate field-effect transistorsSolid-State Electronics, 1964
- Extension of the theory of thin-film transistorsSolid-State Electronics, 1964
- Design theory of a surface field-effect transistorSolid-State Electronics, 1964
- Theory of the space-charge-limited surface-channel dielectric triodeSolid-State Electronics, 1964
- Raumladungsbegrenzte Ströme in hexagonalen Se‐KristallenPhysica Status Solidi (b), 1963