Built-in electric field and surface Fermi level in InP surface-intrinsic n+ structures by modulation spectroscopy
- 15 October 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (8), 3888-3890
- https://doi.org/10.1063/1.365692
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Study of surface Fermi level and surface state distribution in InAlAs surface-intrinsic-n+ structure by photoreflectanceApplied Physics Letters, 1995
- Air stabilized (001) p-type GaAs fabricated by molecular beam epitaxy with reduced surface state densityApplied Physics Letters, 1994
- Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructuresApplied Physics Letters, 1994
- Contactless electromodulation for in situ characterization of semiconductor processingApplied Surface Science, 1993
- Photoreflectance study of the surface Fermi level at (001) n- and p-type GaAs surfacesJournal of Vacuum Science & Technology A, 1992
- I n s i t u photoreflectance study of the effects of sputter/annealing on the Fermi level at (001) n- and p-type GaAs surfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfacesApplied Physics Letters, 1991
- Photoreflectance study of surface Fermi level in GaAs and GaAlAsApplied Physics Letters, 1990
- Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfacesApplied Physics Letters, 1989
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980