Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots
- 31 March 1995
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 267 (5206), 1966-1968
- https://doi.org/10.1126/science.267.5206.1966
Abstract
Ensembles of defect-free InAIAs islands of ultrasmall dimensions embedded in AIGaAs have been grown by molecular beam epitaxy. Cathodoluminescence was used to directly image the spatial distribution of the quantum dots by mapping their luminescence and to spectrally resolve very sharp peaks from small groups of dots, thus providing experimental verification for the discrete density of states in a zero-dimensional quantum structure. Visible luminescence is produced by different nominal compositions of InxAI(1–x)As-AIyGa(1–y)As.Keywords
This publication has 20 references indexed in Scilit:
- Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum DotsPhysical Review Letters, 1994
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Visible photoluminescence from N-dot ensembles and the linewidth of ultrasmall As/As quantum dotsPhysical Review B, 1994
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Cyclic Growth of Strain-Relaxed IslandsPhysical Review Letters, 1994
- Self-organized growth of strained InGaAs quantum disksNature, 1994
- Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films of As on GaAs(100)Physical Review B, 1992
- Effect of strain on surface morphology in highly strained InGaAs filmsPhysical Review Letters, 1991
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- One-dimensional dislocations. I. Static theoryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1949