Efficient lattice-matched double-heterostructure LED’s at 1.1 μm from GaxIn1−xAsyP1−y

Abstract
The growth and operation of lattice‐matched double‐heterostructure InP/Ga0.17In0.83As0.34P0.66/InP light‐emitting diodes is reported. These diodes have an emission wavelength of 1.1 μm and quantum efficiencies of 4%.