Ge nanocrystal metal-oxide-semiconductor transistors with Ge nanocrystals formed by thermal oxidation of poly-Si0.88Ge0.12
- 30 November 2006
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 22 (1), S89-S92
- https://doi.org/10.1088/0268-1242/22/1/s21
Abstract
No abstract availableKeywords
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- Room temperature operation of a quantum-dot flash memoryIEEE Electron Device Letters, 1997