Doping properties of ZnO thin films for photovoltaic devices grown by URT-IP (ion plating) method
- 22 March 2004
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 451-452, 219-223
- https://doi.org/10.1016/j.tsf.2003.10.095
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Natural ordering of ZnO1−xSex grown by radical source MBEJournal of Crystal Growth, 2003
- Bandgap Engineering of ZnO Using SePhysica Status Solidi (b), 2002
- Improvement of Electrical Properties in ZnO Thin Films Grown by Radical Source(RS)-MBEPhysica Status Solidi (a), 2000
- ZnO growth on Si by radical source MBEJournal of Crystal Growth, 2000
- Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBEJournal of Crystal Growth, 2000
- Highly conductive and transparent zinc oxide films prepared by rf magnetron sputtering under an applied external magnetic fieldApplied Physics Letters, 1982
- Vacuum coating with a hollow cathode sourceJournal of Vacuum Science and Technology, 1974