Thin-film, accumulation-mode p-channel SOI MOSFETs
- 1 January 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (5), 257-258
- https://doi.org/10.1049/el:19880172
Abstract
Electrical characteristics of thin-film (100nm), accumulation-mode SOI p-channel MOSFETs are reported and compared to simulation. In the OFF regime, the p-type channel is fully depleted. As a result, very low values of leakage current are obtained. Very good threshold voltage control is also obtained.This publication has 1 reference indexed in Scilit:
- Fast Simulation Tool For MOS/SOI Process OptimizationMRS Proceedings, 1987