Photoluminescence in strained InGaAs-GaAs heterostructures
- 1 November 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (9), 3898-3901
- https://doi.org/10.1063/1.339236
Abstract
Photoluminescence in strained InxGa1−xAs-GaAs single heterostructures, grown by molecular-beam epitaxy, is studied, and the critical layer thickness is determined for a range of In mole fractions. The critical thicknesses are compared with similar values measured on the same layers by double-crystal x-ray diffraction. Both techniques give essentially the same results. The photoluminescence line shapes are discussed for layer thicknesses below and above the critical thickness.Keywords
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