10 GHz bandwidth, 20 dB gain low-noise direct-coupled amplifier ICs using Au/WSiN GaAs MESFET

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Abstract
A low-noise direct-coupled amplifier IC with a bandwidth of 10GHZ was developed using a 0.4 μm gate-length Au/WSiN GaAs MESFET technology. The amplifier achieved a high gain of 20 dB and a minimum noise figure of 3.2 dB with a power consumption of 365 mW.