Consideration of velocity saturation in the design of GaAs varactor diodes
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 3 (6), 161-163
- https://doi.org/10.1109/75.219801
Abstract
The design of GaAs Schottky barrier varactor diodes is reconsidered in light of the recent discovery of velocity saturation effects in these devices. The experimental data are presented confirm that improved multiplier performance can be achieved.<>Keywords
This publication has 4 references indexed in Scilit:
- High efficiency submillimeter frequency multipliersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Current saturation in submillimeter-wave varactorsIEEE Transactions on Microwave Theory and Techniques, 1992
- A Novel Quasi-Optical Frequency Multiplier Design for Millimeter and Submillimeter WavelengthsIEEE Transactions on Microwave Theory and Techniques, 1984
- Diode edge effect on doping-profile measurementsIEEE Transactions on Electron Devices, 1970