Steady-state transport in trap-dominated relaxation semiconductors

Abstract

Steady-state transport in trap-dominated relaxation semiconductors is discussed. It is suggested that under certain conditions such transport can be of a particular simple type. In cases where carrier lifetimes do not change significantly, the steady-state conductivity ratio $K=\frac{{\sigma }_n}{{\sigma }_p}$ remains essentially constant and a conductivity-locked mode of transport can occur. On the basis of this condition, a theory for the Hall effect, photoconductivity, the Dember effect, and the photomagnetoelectric effect is developed. Expressions for the Hall constant, the photocurrent, the Dember photovoltage, and the photomagnetoelectric short-circuit current and open-circuit photovoltage are obtained. When specialized, these expressions give a steady-state theory for these effects in the amorphous semiconductors.