Some practical remarks on the design of experimental systems for expitaxial growth of Si, Ge and SiGe
- 28 February 1974
- Vol. 24 (2), 89-93
- https://doi.org/10.1016/0042-207x(74)90061-x
Abstract
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This publication has 1 reference indexed in Scilit:
- Defects in epitaxial layers of silicon-germanium grown on silicon substratesJournal of Crystal Growth, 1972