InGaAs/InAlAs Multiple Quantum Well (MQW) Optical Modulators Employing a Thick p-i-n MQW Core
- 1 January 1990
- proceedings article
- Published by Optica Publishing Group
Abstract
There has been considerable recent interest in external optical modulators [1]-[5]. MQW optical modulators with more than a 40 GHz modulation bandwidth and 7 V driving voltage at a 1.54 μm wavelength have been reported by the authors [5]. However, the insertion loss was too high due to the large coupling loss caused by small spotsize (<0.4 μ m) in the vertical direction.Keywords
This publication has 3 references indexed in Scilit:
- High-speed InGaAlAs/InAlAs multiple quantum well optical modulators with bandwidths in excess of 20 GHz at 1.55 mu mIEEE Photonics Technology Letters, 1989
- New travelling-wave electrode Mach-Zehnder optical modulator with 20 GHz bandwidth and 4.7 V driving voltage at 1.52 μm wavelengthElectronics Letters, 1989
- High-frequency InGaAs/InP multiple-quantum-well buried-mesa electroabsorption optical modulatorElectronics Letters, 1987