Abstract
Fourier-transform infrared spectroscopy on the charge-state-dependent local modes of the off-center substitutional oxygen impurity in GaAs has revealed an inverted ordering of the two gap levels. The metastable one-electron state shows the characteristic disproportionation into the zero- and the two-electron state. From the thermally activated decay of the local mode lines and the observed threshold energies for the photoionization cross sections σp0(1) and σn0(2), binding energies of 0.15 and 0.62 eV for the first and the second electron, respectively, are deduced.