Surface morphology of GaAs(110) by scanning tunneling microscopy
- 15 July 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (2), 1394-1396
- https://doi.org/10.1103/physrevb.32.1394
Abstract
The surface morphology of cleaved GaAs(110) has been studied by scanning tunneling microscopy. Atomic rows (zigzag chains of alternating Ga and As atoms directed in the [1¯10] direction) are clearly resolved, and structure along the rows is also seen. The surface is observed to have 1×1 periodicity, with an [001] corrugation amplitude in the range 0.2–0.5 Å, and a [1¯10] corrugation amplitude of ∼0.05 Å. Differences between images of n- and p-type GaAs are seen. Surface point defects are observed, consisting typically of 0.7-Å-deep depressions along an atomic row.Keywords
This publication has 6 references indexed in Scilit:
- Theory of the scanning tunneling microscopePhysical Review B, 1985
- The geometric structures of the GaAs(111) and (110) surfacesJournal of Vacuum Science & Technology B, 1984
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983
- Surface Studies by Scanning Tunneling MicroscopyPhysical Review Letters, 1982
- Dynamical calculation of low-energy electron diffraction intensities from GaAs(110): Influence of boundary conditions, exchange potential, lattice vibrations, and multilayer reconstructionsPhysical Review B, 1979
- Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)Physical Review Letters, 1976