Growth of InAs Whiskers in Wurtzite Structure
- 1 August 1966
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 5 (8), 657-662
- https://doi.org/10.1143/jjap.5.657
Abstract
InAs was evaporated onto glass substrates coated with Ag or Au films. Whiskers were grown while maintaining these substrates at 450°C. The crystal structure of the whiskers was determined to be of hexagonal wurtzite type by X-ray diffraction study. Lattice constants were a=4.27Å, and c=7.02Å. Conversion of hexagonal InAs to cubic was made by after-heating for 5 minutes at 800°C. The appearance of InAs whiskers is considered to be due to stacking faults in cubic (111) planes.Keywords
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