Liquid phase epitaxial growth of AlGaSb
- 31 May 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 66 (3), 493-500
- https://doi.org/10.1016/0022-0248(84)90147-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Electrical and Optical Studies in Gallium AntimonideJapanese Journal of Applied Physics, 1981
- Resonant enhancement of impact in Ga1−xAlxSbApplied Physics Letters, 1980
- Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON B InPJournal of Electronic Materials, 1980
- The A1-Ga-Sb ternary phase diagram and its application to solution growthJournal of Crystal Growth, 1979
- Ultimate low-loss single-mode fibre at 1.55 μmElectronics Letters, 1979
- Improved method of anodic oxidation of GaAsElectronics Letters, 1975
- Observation of the Interaction of Plasmons with Longitudinal Optical Phonons in GaAsPhysical Review Letters, 1966
- The Raman effect in crystalsAdvances in Physics, 1964