A New Self-Aligned Structure for (GaAl)As High Power Lasers with Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD
- 1 June 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (6A), L498
- https://doi.org/10.1143/jjap.25.l498
Abstract
A new transverse-mode stabilizing self-aligned structure for (GaAl)As laser diodes by metal organic chemical vapor deposition (MOCVD) is developed. This structure is characterized by an n-GaAs layer grown selectively outside of a mesa stripe using an SiO2 mask. To control the distance between active and n-GaAs layers a highly selective (GaAl)As etching technique by boiled HCl is used. Furthermore, the laser diodes can operate in the fundamental transverse-mode at light output power up to 70 mW with a threshold current of 60 mA under CW operation at lasing wavelengths of 750–760 nm.Keywords
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