Fatigue effect in luminescence of glow discharge amorphous silicon at low temperatures
- 29 February 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 33 (8), 851-856
- https://doi.org/10.1016/0038-1098(80)91204-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Study of localized states in amorphous semiconductor chalcogenides by radiative recombinationPhysica Status Solidi (a), 1974
- Photoluminescence in amorphous As2S3Journal of Physics C: Solid State Physics, 1973
- Radiative recombination in amorphous As2Se3Physica Status Solidi (a), 1973