The generation of point defects in GaAs by electron-hole recombination at dislocations
- 31 December 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (11-12), 1413-1417
- https://doi.org/10.1016/0038-1101(78)90217-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The new origin of dark-line defects in planar-stripe DH lasersIEEE Journal of Quantum Electronics, 1977
- The origin of dislocation climb during laser operationApplied Physics Letters, 1977
- Dislocation climb model in compound semiconductors with zinc blende structureApplied Physics Letters, 1976
- Defect structure of degraded GaAlAs-GaAs double heterojunction lasersPhilosophical Magazine, 1975
- Interstitial condensation in n+ GaAsJournal of Materials Science, 1975
- Defect structure of degraded heterojunction GaAlAs−GaAs lasersApplied Physics Letters, 1975
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974
- The nature of defects inn+ gallium arsenidePhilosophical Magazine, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973
- Transmission electron microscope studies of point defect clusters in fcc and bcc metalsJournal of Physics F: Metal Physics, 1973