Experimental Verification of the Surface Quantization of ann-Type Inversion Layer of Silicon at 300 and 77°K

Abstract

The quantization of the motion, perpendicular to the surface, of electrons in an inversion layer at the surface of a silicon substrate is experimentally verified by accurate capacitance measurements at 77 and 300 °K. From the measurements the average distance of the electrons from the interface can be derived. To obtain agreement with the calculated value, the quantization has to be taken into account.