Al Redistribution in Thermally Oxidized Si Surface
- 1 March 1963
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 18 (3), 460-461
- https://doi.org/10.1143/jpsj.18.460
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- N Type Conversion of Thermally Oxidized Si SurfaceJournal of the Physics Society Japan, 1962
- 1/f Noise and Channel in Ge PN JunctionJournal of the Physics Society Japan, 1960
- Impurity Redistribution and Junction Formation in Silicon by Thermal OxidationBell System Technical Journal, 1960