Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVD

Abstract

At a low temperature of 500°C, we have formed diamond films on Al substrates at 0.1 Torr using a magneto-microwave plasma CVD system. Since diamond can be formed at the low pressure of 0.1 Torr, the important parameters for diamond formation such as the plasma density during the diamond deposition can be measured and is found to be the highest (2.1×10¹¹ cm^-3) at ECR condition. Above 1×10¹¹ cm^-3, using a (CH₄+CO₂)/H₂ mixture, which is a suitable reaction gas for low-temperature diamond formation, high-quality diamond films have been obtained at temperatures as low as 500°C and at low pressure (0.1 Torr) on Al.