Total energy calculations of missing dimer reconstructions on the silicon (001) surface
- 15 May 1989
- journal article
- letter
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 1 (19), 3139-3143
- https://doi.org/10.1088/0953-8984/1/19/008
Abstract
Total energy pseudopotential calculations of missing dimer reconstructions on the Si(001) surface are presented. The authors have calculated the energy of the ideal unreconstructed surface and the energy of the (2*1) symmetric dimer, the (2*4) single missing dimer, the (2*2) single missing dimer and the (2*4) double missing dimer reconstructions. Their calculations give the (2*1) symmetric dimer reconstruction as the lowest energy surface of those considered. The double missing dimer reconstuction is very high in energy. The energy cost of removing one line of dimers in every four to form a (2*4) single missing dimer reconstruction is only 0.28 eV per dimer removed. Thus single missing dimer defects are either low-energy structural excitations or possibly a feature of the ground state of the silicon (001) surface.Keywords
This publication has 8 references indexed in Scilit:
- Formation and atomic configuration of Si(100)c(4 × 4) structureSurface Science, 1988
- Behavior of Ga on Si(100) as studied by scanning tunneling microscopyApplied Physics Letters, 1988
- Ordered-defect model for Si(001)-(2×8)Physical Review B, 1986
- Structure, Stability, and Origin of () Phases on Si(100)Physical Review Letters, 1986
- Si(001) Dimer Structure Observed with Scanning Tunneling MicroscopyPhysical Review Letters, 1985
- Theory of reconstruction induced subsurface strain — application to Si(100)Surface Science, 1978
- Low-Energy Electron Diffraction Study of Silicon Surface StructuresThe Journal of Chemical Physics, 1962
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959