Formation of an impurity band and its quantum confinement in heavily doped GaAs:N

Abstract

Quantum confinement in ${\mathrm{GaAs}}_{1-x}{\mathrm{N}}_x/\mathrm{GaAs}$ quantum wells $\mathrm{}(0.009<x<\mathrm{}0.045\mathrm{})\mathrm{}$ is studied using electroreflectance measurements. Formation of an impurity band due to heavy nitrogen doping and the quantum confinement of an electron belonging to such an impurity band have been demonstrated. The formation of an impurity band results in an unusual variation in the electron effective mass with nitrogen doping.