Quantum Monte Carlo calculations of the one-body density matrix and excitation energies of silicon
- 15 June 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (24), 15293-15302
- https://doi.org/10.1103/physrevb.57.15293
Abstract
Quantum Monte Carlo (QMC) techniques are used to calculate the one-body density matrix and excitation energies for the valence electrons of bulk silicon. The one-body density matrix and energies are obtained from a Slater-Jastrow wave function with a determinant of local-density approximation (LDA) orbitals. The QMC density matrix evaluated in a basis of LDA orbitals is strongly diagonally dominant. The natural orbitals obtained by diagonalizing the QMC density matrix resemble the LDA orbitals very closely. Replacing the determinant of LDA orbitals in the wave function by a determinant of natural orbitals makes no significant difference to the quality of the wave function’s nodal surface, leaving the diffusion Monte Carlo energy unchanged. The extended Koopmans’s theorem for correlated wave functions is used to calculate excitation energies for silicon, which are in reasonable agreement with the available experimental data. A diagonal approximation to the theorem, evaluated in the basis of LDA orbitals, works quite well for both the quasihole and quasielectron states. We have found that this approximation has an advantageous scaling with system size, allowing more efficient studies of larger systems.Keywords
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This publication has 42 references indexed in Scilit:
- Variational quantum Monte Carlo ground state of GaAsPhysical Review B, 1996
- Electronic structure by quantum Monte Carlo: atoms, molecules and solidsComputer Physics Communications, 1996
- Quantum Monte Carlo Determination of Electronic and Structural Properties of SClusters (n20)Physical Review Letters, 1995
- The extended Koopmans’ theorem and its exactnessThe Journal of Chemical Physics, 1992
- Pair-correlation function and single-particle occupation numbers in diamond and siliconPhysical Review Letters, 1990
- Extended‐Koopmans ‐ theorem approach to ab initio calculations upon the ground state and first excited state of the LiH anionInternational Journal of Quantum Chemistry, 1986
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Calculation of ionization potentials from density matrices and natural functions, and the long-range behavior of natural orbitals and electron densityThe Journal of Chemical Physics, 1975
- Extension of Koopmans’ theorem. I. DerivationThe Journal of Chemical Physics, 1975
- Extension of Koopmans’ theorem. II. Accurate ionization energies from correlated wavefunctions for closed-shell atomsThe Journal of Chemical Physics, 1975