Effects of abrupt and graded a-Si:C:H/a-Si:H interface on internal properties and external characteristics of p-i-n a-Si:H solar cells

Abstract

Using a computer simulation, the effects of abrupt and graded a-Si:C:H/a-Si:H interfaces on the performance of a-Si:H p-i-n solar cells are discussed. It is shown that structures with graded heterojunction transitions possess much lower recombination near the junction and a higher accelerating built-in electric field in the i layer, both of which increase the open-circuit voltage and improve the solar cell fill factor.