Abstract
The photoabsorption cross sections of Cd, Te, Zn, S, and Se alkyls have been measured at wavelengths between 190 and 400 nm, based on measurements of UV absorption spectra. These spectra have intense absorption bands from 190 to 250 nm. The peak values of these cross sections are 1–6×10−17 cm2 molecule−1. The in situ measurements of photolysis of these alkyls have been achieved by monitoring UV absorption spectra in a metalorganic chemical vapor deposition (MOCVD) reactor. The results show that the photolysis of these alkyls can be quantitatively controlled by varying the laser power. As applications of above studies, photoassisted MOCVD of CdTe, HgTe, and ZnS has been demonstrated using ArF and KrF excimer lasers. Specular surfaces were obtained at growth temperatures of 100 to 150 °C.
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