Thin films of aluminium oxide, Al2O3, have been deposited by atmospheric pressure MOCVD using trimethylaluminium (Me3Al) and iso-propanol (Pr'OH) as precursors. The films were deposited over the temperature range 400-600°C and had growth rates of up to 67 Å min-1. Analysis by Auger electron spectroscopy showed that films deposited at 400°C were high purity with carbon contamination < 0.5 at %