High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy
- 29 September 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (13), 1810-1812
- https://doi.org/10.1063/1.119406
Abstract
We describe the growth of high quality CdTe(211)B layers by molecular beam epitaxy on nominal Si(211) substrates. Prior to CdTe deposition, thin ZnTe(211)B buffer layers were grown to preserve the homo-orientation. Large-area CdTe(211)B layers were routinely obtained by optimizing the growth parameters. From x-ray diffraction, we observed the presence of twin-free CdTe(211)B layers. One 8 μm thick CdTe epilayer had a near-surface etch pit density of 1.5×105 cm−2, which surpassed the best value reported for CdTe(211)B grown on GaAs(211)B, GaAs/Si(211), or Si(211) substrates.Keywords
This publication has 10 references indexed in Scilit:
- Heteroepitaxy of CdTe on {211}Si substrates by molecular beam epitaxyJournal of Crystal Growth, 1996
- Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxyJournal of Electronic Materials, 1995
- Molecular-beam epitaxial growth of CdTe(112) on Si(112) substratesApplied Physics Letters, 1995
- Direct MBE growth of CdZnTe on Si(100) and Si(112) substrates for large-area HgCdTe IRFPAsPublished by SPIE-Intl Soc Optical Eng ,1993
- Annealing effect on the P-type carrier concentration in low-temperature processed arsenic-doped HgCdTeJournal of Electronic Materials, 1993
- Growth and properties of In- and As-doped HgCdTe by MBEJournal of Crystal Growth, 1993
- Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)B substratesApplied Physics Letters, 1991
- Dislocation density reduction by thermal annealing of HgCdTe epilayers grown by molecular beam epitaxy on GaAs substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)Applied Physics Letters, 1989
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986