Radiative Recombination on Dislocations in Silicon Crystals

Abstract

Photoluminescence spectra in plastically deformed silicon crystals have been measured to investigate the dislocation-induced energy state of electrons in the band gap. Plastic deformation gives rise to four luminescence lines irrespective of the type of conduction of the crystal. The luminescent lights are strongly polarized in the direction parallel to the dislocation line. A phenomenological expression which relates the luminescent intensity with parameters characterizing the dislocations is deduced on the basis of the experimental results.