Use of guided spontaneous emission of a semiconductor to probe the optical properties of two-dimensional photonic crystals
- 11 August 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (6), 738-740
- https://doi.org/10.1063/1.119630
Abstract
We describe an experimental setup, which allows assessing the optical properties of two-dimensional photonic crystals combined with a waveguide geometry, and etched into a light-emitting (GaAs/InGaAs) semiconductor. By means of a guiding layer, the spontaneous emission of the material is used as a built-in source to probe the properties of the etched microstructure, conveniently compared to the usual measurement schemes. We show polarized transmission and coefficients largely depending on the photonic crystal orientation.Keywords
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