Strain modification by ion-assisted molecular beam epitaxy in the SixGe1−x alloy system: a kinetic analysis
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4), 931-935
- https://doi.org/10.1016/0022-0248(91)91110-v
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Partitioning of ion-induced surface and bulk displacementsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Heteroepitaxy of 76Ge films on GaAs by direct deposition from a low-energy ion beamJournal of Vacuum Science & Technology A, 1989
- Ion beam deposition in materials researchNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- An optimized i n s i t u argon sputter cleaning process for device quality low-temperature (T≤800 °C) epitaxial silicon: Bipolar transistor and p n junction characterizationJournal of Applied Physics, 1987
- Dynamical x-ray diffraction from nonuniform crystalline films: Application to x-ray rocking curve analysisJournal of Applied Physics, 1986
- Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometerJournal of Vacuum Science & Technology B, 1983
- Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part ICritical Reviews in Solid State and Materials Sciences, 1983
- Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 KApplied Physics Letters, 1982