Structure and chemistry of silicon surfaces after pre- and backsputtering, studied with Auger spectroscopy, ellipsometry, and RHEED
- 2 July 1973
- journal article
- Published by Elsevier in Surface Science
- Vol. 38 (2), 341-356
- https://doi.org/10.1016/0039-6028(73)90166-0
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Analytical Auger Electron SpectroscopyPublished by Springer Nature ,1974
- A New Technique for the Elemental Analysis of Thin Surface Layers of SolidsApplied Physics Letters, 1971
- Auger electron spectroscopySurface Science, 1971
- Contaminants on chemically etched silicon surfaces: LEED-Auger methodSurface Science, 1970
- Calculation of Ion Bombarding Energy and Its Distribution in rf SputteringPhysical Review B, 1968
- Electrical Studies of Neutron-Irradiated-Type Si: Defect Structure and AnnealingPhysical Review B, 1967
- Temperature dependence of ejection patterns in Ge, Si, InSb, and InAs sputteringSurface Science, 1964
- Determination of the Properties of Films on Silicon by the Method of EllipsometryJournal of the Optical Society of America, 1962