Fabrication of fully scaled 0.5-μm n-type metal–oxide semiconductor test devices using synchrotron x-ray lithography: Overlay, resist processes, and device fabrication
- 1 November 1988
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 6 (6), 2147-2152
- https://doi.org/10.1116/1.584104