Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
- 1 July 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (7A), L513-515
- https://doi.org/10.1143/jjap.24.l513
Abstract
Lateral solid phase epitaxy (L-SPE) of boron (B) doped amorphous Si films onto SiO2 patterns was investigated. The L-SPE rate in B-doped films was found to be about 8 times higher than that in undoped films and the L-SPE length measured from the pattern edge was twice enhanced by the doping effect. It was also found that the L-SPE rate in B-doped samples is proportional to the amount of B atoms introduced in the Si film, if the maximum concentration of B atoms does not exceed the solid solubility limit in Si.Keywords
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