Carbon in molecular beam epitaxial GaAs
- 1 February 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (3), 156-157
- https://doi.org/10.1063/1.92284
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAsApplied Physics Letters, 1980
- Electron mobility in compensated GaAs and AlxGa1−xAsJournal of Applied Physics, 1980
- Electron mobility in compensated GaAs and AlxGa1−xAsApplied Physics Letters, 1980
- Photoluminescence of shallow acceptors in epitaxial AlxGa1−xAsJournal of Applied Physics, 1980
- The effect of substrate temperature on the current threshold of GaAs-AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1980
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975