Diffusion and defect annealing in silicon doped by phosphorus ion implantation
- 16 June 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 2 (2), 203-209
- https://doi.org/10.1002/pssa.19700020203
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968