Influence of Growth Temperature and Substrate Material on the Properties of Epitaxial GaN
- 1 January 1974
- journal article
- other
- Published by Wiley in Crystal Research and Technology
- Vol. 9 (8), K69-K72
- https://doi.org/10.1002/crat.19740090812
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Luminescence of insulating Be-doped and Li-doped GaNJournal of Luminescence, 1973
- Luminescence of Be- and Mg-doped GaNJournal of Applied Physics, 1973
- Production of nitrides by active nitrogen. I. GaNMaterials Research Bulletin, 1973
- Electrical properties of n-type vapor-grown gallium nitrideJournal of Physics and Chemistry of Solids, 1973
- Luminescence in GaNJournal of Luminescence, 1973
- Vapor epitaxy of gallium nitrideJournal of Crystal Growth, 1972
- The Equilibrium Pressure of N2 over GaNJournal of the Electrochemical Society, 1972
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971
- Gallium Nitride FilmsJournal of the Electrochemical Society, 1971
- On the dislocation scattering in silicon-on-insulator filmsPhysica Status Solidi (a), 1970