In IGFET circuitry, it has been predicted that halving the lateral dimensions should bring about approximately a fourfold speed advantage; providing doping levels, vertical dimensions, and applied voltages are constant. We have used electron lithography to make p-channel IGFET inverter circuits with 9- and 4-μ gates and have demonstrated a sixfold improvement in the propagation delay for smaller circuits. The devices were made using a refractory metal and ion implantation as described by Moline et al., and by Boll and Lynch. (IEDM, Washington, 1972). The electron resist (used for all four lithographic stages) was much more sensitive than polymethylmethacrylate.