Properties of highly excited semiconductors (experimental aspects)
- 11 October 2007
- book chapter
- Published by Springer Nature
- p. 111-143
- https://doi.org/10.1007/bfb0108569
Abstract
No abstract availableKeywords
This publication has 73 references indexed in Scilit:
- Hot Excitons in Highly Excited CdSPhysical Review Letters, 1972
- Induced Absorption in the Presence of High Electronic ExcitationPhysical Review Letters, 1971
- Kinetics of Excitons in CdS at TemperaturePhysical Review B, 1970
- Exciton-Exciton Interaction in CdS, CdSe, and ZnOPhysical Review Letters, 1970
- Electron-hole Drops in SemiconductorsSoviet Physics Uspekhi, 1970
- Effects of excitation intensity on the photoluminescence near the bandgap of n-InPSolid State Communications, 1969
- Radiative Recombination in Highly Excited CdSPhysical Review B, 1969
- Experimental Observation of the Excitonic MoleculePhysical Review Letters, 1966
- The transition to the metallic statePhilosophical Magazine, 1961
- The Structure of Electronic Excitation Levels in Insulating CrystalsPhysical Review B, 1937