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Low Temperature Silicon Epitaxy by Partially Ionized Vapor Deposition
Home
Publications
Low Temperature Silicon Epitaxy by Partially Ionized Vapor Deposition
Low Temperature Silicon Epitaxy by Partially Ionized Vapor Deposition
TI
Tadatsugu Itoh
Tadatsugu Itoh
TN
Tohru Nakamura
Tohru Nakamura
MM
Masashi Muromachi
Masashi Muromachi
TS
Tetsuya Sugiyama
Tetsuya Sugiyama
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1 April 1977
journal article
Published by
IOP Publishing
in
Japanese Journal of Applied Physics
Vol. 16
(4)
,
553-557
https://doi.org/10.1143/jjap.16.553
Abstract
No abstract available
Keywords
ROOM TEMPERATURE
SINGLE CRYSTAL
CURRENT DENSITY
Cited by 43 articles