MNOS memory transistors in simple memory arrays
- 1 October 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 7 (5), 382-388
- https://doi.org/10.1109/jssc.1972.1052897
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Properties of MNOS structuresIEEE Transactions on Electron Devices, 1972
- Theory of the thin-oxide m.n.o.s. memory transistorElectronics Letters, 1970
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969
- An integrated metal-nitride-oxide-silicon (MNOS) memoryProceedings of the IEEE, 1969
- Switching and storage characteristics of MIS memory transistorsIEEE Transactions on Electron Devices, 1969
- CHARGE STORAGE MODEL FOR VARIABLE THRESHOLD FET MEMORY ELEMENTApplied Physics Letters, 1969
- The variable-threshold transistor, a new electrically-alterable, nondestructive READ-only storage deviceIEEE Transactions on Electron Devices, 1968
- MEMORY BEHAVIOR OF AN MNS CAPACITORApplied Physics Letters, 1968
- Current Transport and Maximum Dielectric Strength of Silicon Nitride FilmsJournal of Applied Physics, 1967