Nanometer-scale GaAs clusters from organometallic precursors
- 10 August 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (6), 696-698
- https://doi.org/10.1063/1.107825
Abstract
We report the synthesis of crystalline nanometer-scale GaAs clusters by homogeneous vapor-phase nucleation from organometallic precursors. Cluster synthesis is performed in a hot wall organometallic vapor-phase epitaxy reactor at atmospheric pressure. High resolution transmission electron microscopy studies reveal that the aerosol produced is composed of highly faceted single crystal GaAs particles in the 10–20 nm range. The influence of growth temperature and reactant concentration on cluster morphology is discussed.Keywords
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